Comparison: Goodram IRDM 256GB vs. Samsung 970 EVO Plus 250GB

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	Goodram IRDM 256GB	VS.	Samsung 970 EVO Plus 250GB
	Show individual test		Show individual test
Technical manufacturer specifications
Manufacturer	Goodram		Samsung
Model number	IR-SSDPR-P34B-256-80		MZ-V7S250BW
Capacity	256 GB		250 GB
Capacity (according to IEC)	238 GiB		233 GiB
Read speed	3,000 MB/s		3,500 MB/s
Write speed	1,000 MB/s		2,300 MB/s
Form factor	M.2 2280	=	M.2 2280
Interface	PCIe 3.0 x4	=	PCIe 3.0 x4
Controller	Phison PS5012-E12S		Samsung Phoenix (S4LR020)
DRAM	✓ Yes	=	✓ Yes
Memory module (NAND)	TLC	=	TLC
TBW (Total Bytes Written)	150  terabyte	=	150  terabyte
Warranty	5  Years	=	5  Years
AS SSD performance data
Sequential read	2,664 MB/s	14% ∆	3,045 MB/s
Sequential write	1,075 MB/s	111% ∆	2,268 MB/s
4K Read	50 MB/s	35% ∆	67 MB/s
4K Write	177 MB/s	6% ∆	187 MB/s
4K-64Thrd Read	680 MB/s	37% ∆	935 MB/s
4K-64Thrd Write	1,025 MB/s	101% ∆	2,059 MB/s
Access time read	0.027 ms	4% ∆	0.026 ms
Access time write	0.106 ms	7% ∆	0.099 ms
Score	2749	61% ∆	4428
CrystalDiskMark performance data
SEQ1M Q8T1 Read	3,104 MB/s	15% ∆	3,577 MB/s
SEQ1M Q8T Write	1,130 MB/s	111% ∆	2,383 MB/s
SEQ1M Q1T1 Read	1,880 MB/s	58 % ∆	2,973 MB/s
SEQ1M Q1T1 Write	1,131 MB/s	111% ∆	2,384 MB/s
RND4K Q32T16 Read	748 MB/s	20% ∆	624 MB/s
RND4K Q32T16 Write	1,122 MB/s	108% ∆	2,329 MB/s
RND4K Q1T1 Read	53 MB/s	9% ∆	49 MB/s
RND4K Q1T1 Write	185 MB/s	10% ∆	204 MB/s
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Goodram IRDM 256GB	Samsung 970 EVO Plus 250GB

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