Comparison: Intenso MI500 2TB vs. Samsung 990 PRO 2TB

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	Intenso MI500 2TB	VS.	Samsung 990 PRO 2TB
	Show individual test		Show individual test
Technical manufacturer specifications
Manufacturer	Intenso		Samsung
Model number	3836470		MZ-V9P2T0BW
Capacity	2,048 GB	=	2,048 GB
Capacity (according to IEC)	1,863 GiB	=	1,863 GiB
pSLC cache	>300 GB		230 GB
Read speed	5,300 MB/s		7,450 MB/s
Write speed	4,500 MB/s		6,900 MB/s
Form factor	M.2 2280	=	M.2 2280
Interface	PCIe 4.0 x4	=	PCIe 4.0 x4
Controller	Maxio MAP1608		Samsung Pascal (S4LV008)
DRAM	No		✓ Yes
Memory module (NAND)	TLC	=	TLC
TBW (Total Bytes Written)	1200  terabyte	=	1200  terabyte
Warranty	2  Years		5  Years
AS SSD performance data
Sequential read	4,267 MB/s	40% ∆	5,967 MB/s
Sequential write	4,208 MB/s	38% ∆	5,827 MB/s
4K Read	58 MB/s	38% ∆	80 MB/s
4K Write	172 MB/s	4% ∆	178 MB/s
4K-64Thrd Read	2,023 MB/s	44% ∆	2,913 MB/s
4K-64Thrd Write	2,036 MB/s	58% ∆	3,221 MB/s
Access time read	0.022 ms	10% ∆	0.020 ms
Access time write	0.420 ms	285% ∆	0.109 ms
Score	6416	46% ∆	9398
CrystalDiskMark performance data
SEQ1M Q8T1 Read	4,918 MB/s	52% ∆	7,459 MB/s
SEQ1M Q8T Write	4,704 MB/s	48% ∆	6,967 MB/s
SEQ1M Q1T1 Read	4,324 MB/s	27 % ∆	3,410 MB/s
SEQ1M Q1T1 Write	4,706 MB/s	21% ∆	5,688 MB/s
RND4K Q32T16 Read	2,944 MB/s	23% ∆	3,635 MB/s
RND4K Q32T16 Write	2,274 MB/s	43% ∆	3,242 MB/s
RND4K Q1T1 Read	68 MB/s	25% ∆	85 MB/s
RND4K Q1T1 Write	188 MB/s	3% ∆	194 MB/s
Buy product
Current price	330 $	36% ∆	450 $
Price per gigabyte	0.16 $	36% ∆	0.22 $
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Intenso MI500 2TB	Samsung 990 PRO 2TB

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